MRF6S21100NR1 MRF6S21100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=28Vdc,Pout
= 23 W Avg., and
ηD
= 25.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
W--CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
PROBABILITY (%)
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
-- 1 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 2 0
--25 2551510
20
0
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 3 0
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01%
Probability on
CCDF
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6S21140HSR5
MOSFET RF N-CHAN 28V 30W NI-880S
MRF6S21190HSR5
MOSFET RF N-CH 54W NI880S
MRF6S23100HSR5
MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5
MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS
IC MOSFET RF N-CHAN NI-880S
MRF6S27015NR1
IC MOSFET RF N-CHAN TO270-2
MRF6S27050HSR5
IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5
MOSFET RF N-CHAN 28V 20W NI-780S
相关代理商/技术参数
MRF6S21100NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3
功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21140HR3_07
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6S21140HR5
功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21140HSR3
功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21140HSR5
功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21190H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors